| AAPPS Bulletin
Vol.14 No.3, June 2004 |
Highlight
of the Issue
RF-Molecular Beam Epitaxy Growth and Properties of InN and
Related Alloys (PDF, 943KB)
Yasushi Nanishi*,
Yoshiki Saito†, and Tomohiro Yamaguchi*
*Department of
Photonics and †Faculty of Science and Engineering Ritsumeikan University,
Japan
abstract
The fundamental band gap of InN has been thought to be about
1.9 eV for a long time. Recent developments of metalorganic
vapor phase epitaxy (MOVPE) and RF-molecular beam epitaxy (RF-MBE)
growth technologies have made it possible to obtain highquality
InN films. A lot of experimental results have been presented
very recently, suggesting that the true bandgap energy of InN
should be less than 1.0 eV. In this paper, we review the results
of the detailed study of RFMBE growth conditions for obtaining
high-quality InN films. The full widths at half maximum (FWHMs)
of ω-mode X-ray diffraction (XRD), ω—2θ
mode XRD and E2 (high-frequency)-phonon-mode peaks in the Raman
scattering spectrum of the grown layer were 236.7 arcsec, 28.9
arcsec and 3.7 cm-1, respectively. The carrier
concentration and room temperature electron mobility were 4.9×1018cm-3
and 1,130 cm2/Vs, respectively. Photoluminescence and
optical absorption measurements of these high-quality InN films
have clearly demonstrated that the fundamental band gap of InN
is about 0.8 eV. Studies on the growth and characterization of
InGaN alloys over the entire alloy composition further supported
that the fundamental band gap of InN is about 0.8 eV.
Keywords: InN, InGaN, band gap, RF-MBE, characterization, PL,
optical absorption, XRD, EXAFS, Raman
scattering. |
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